BM3110 Electronic Instrumentation · Lecture 3 of 7

Noise and Interference in Instrumentation — Part 3: Modelling Diode and BJT Noise

University of Moratuwa · Dept. of Biomedical Engineering · Semester 5 · Fall 2026 · 49 slides
diode small-signal modeldiode shot, flicker and thermal noiseBJT hybrid-π modelthe six BJT noise sourcesinput-referred noiseeffect of source impedance
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Parts 1–2 introduced noise sources and their spectral densities. This lecture shows how to build circuit-level noise models of real semiconductor devices: first the diode, then the bipolar junction transistor (BJT). Both are non-linear, so the analysis starts from a small-signal (linearised) model and attaches the physical noise mechanisms to it. The lecture ends with the subtle part — why a BJT’s input-referred noise needs a voltage and a current source, and why they cannot be treated as independent.

1. Small-signal model of a diode

A diode is a non-linear device described by the Shockley equation:

Shockley diode equation ID = IS(eVD/ηVT − 1),   VT = kBT/q ≈ 25.7 mV at room temperature

with IS the reverse saturation current (order of 10−10 A), η the ideality factor (typically 1–2) and VT the thermal voltage. The equation assumes steady state — it says nothing about how the diode responds to time-varying signals.

We study small signals because they are the ones most susceptible to noise. For a small signal the diode is usually forward biased, and in the small region around the operating point Q the curve can be replaced by its tangent:

Slope at the Q-point dID/dVD |Q = (IDQ + IS)/(ηVT) ≈ IDQ/(ηVT)   (since IS ≈ 10−10 A ≪ IDQ)

This slope has units of conductance, so its inverse is a resistance — the dynamic resistance rd = ηVT/IDQ. To capture time-varying behaviour the junction capacitance Cj and the diffusion capacitance Cd are placed in parallel with rd.

2. Diode noise sources

A diode has three main noise sources, all attached to the small-signal model:

+−vnRs2Rsins2inF2rdCj , CdThe dynamic resistance rd is not a physical resistor, so it contributes no thermal noise.
Fig. 1 — Small-signal noise model of a diode (redrawn from the lecture slides)
Why doesn’t rd make thermal noise? The dynamic resistance is not a real resistor — it is a behavioural quantity added to the model to resemble the diode’s I–V relationship. Only physical resistances (like the bulk resistance Rs) generate thermal noise.

3. Total diode noise voltage

The three sources sit in different branches, so they cannot simply be added. Rs’s thermal noise is a series voltage, whereas shot and flicker noise are parallel currents. The fix is to convert the parallel currents into an equivalent series (Thévenin) voltage across rd, after which KVL applies and, with the sources uncorrelated, the mean-square values add:

Total noise voltage of a diode (with Δf = fH − fL) v̄n,tot2 = 4kBTΔf Rs + [ 2qIDQΔf + KF IDQα ln(fH/fL) ] rd2

Substituting IDQ = ηVT/rd and VT = kBT/q collapses the shot-noise term and gives the compact form from the lecture:

v̄n,tot2 = 2kBTΔf (2Rs + ηrd) + KF IDQα ln(fH/fL) rd2

For simplicity the capacitances are ignored here (open circuit), which is reasonable for frequencies up to the MHz range where their roll-off has not yet begun.

4. BJT small-signal model and current gain

There are several small-signal models for a BJT. The lecture groups them into physics-based models (the hybrid-π model, with simplified, low-frequency and high-frequency variants, and the T-model) and two-port / black-box models (h-parameters, built from measured terminal behaviour). The analysis uses the high-frequency hybrid-π model with gm, rπ, ro, Cπ and Cμ (Fig. 2).

Linearising IC ≈ ISeVBE/VT about the operating point gives the transconductance gm = ICQ/VT (collector shorted so ro does not matter), and the DC current gain follows directly:

DC current gain βDC = IC/IB = gm rπ

With the collector shorted for AC, the base sees rπ in parallel with Cπ and Cμ, so the AC current gain is a low-pass response:

AC current gain and unity-gain frequency βAC = βDC / (1 + jωrπ(Cπ+Cμ)),    |βAC|2 = 1 / [ 1/βDC2 + (ω/ωT)2 ],    ωT = gm/(Cπ+Cμ)

This resembles an RC low-pass filter with corner f−3 = 1/[2πrπ(Cπ+Cμ)]. As ω approaches ωT the current gain falls to 1: beyond that the BJT no longer works as an amplifier, so ωT is the maximum useful operating frequency. Because gm = ICQ/VT, the unity-gain frequency is not a fixed property of the device — it changes with the quiescent collector current.

5. The six noise sources of a BJT

A BJT has six main noise sources: three thermal, two shot and one flicker.

+−BCEvrb2RBiB2iF2rπCπCμgmvπroiC2+−vπSeries thermal noiseBase shot + flickerCollector shotRed sources are noise. The dynamic resistances rπ and ro are small-signal parameters, not physical resistors, so they add no noise.
Fig. 2 — Hybrid-π model of a BJT with its noise sources (redrawn from the lecture slides). RE and RC are neglected.

As with the diode, the dynamic resistances rπ and ro are not real resistors and add no noise.

6. Referring BJT noise to the input

A BJT is a two-port, so its equivalent input-referred noise model needs a series voltage source and a parallel current source across the input port. Everything is transferred to the input side: base thermal noise is already in series at the input; base shot and flicker noise are already across the input; only the collector shot noise is still at the output.

To refer the collector shot noise to the input as a current, divide by the squared magnitude of the AC current gain; to refer it as a voltage, divide by the squared transconductance (an AC quantity):

Collector shot noise referred to the input īnc−ir2 = īnC2/|βAC|2 = 2qΔf IBQ [1 + (ωrπ(Cπ+Cμ))2] / (gm rπ)
v̄nc−ir2 = īnC2/gm2 = 2qΔf IBQ rπ/gm

Adding up the pieces, the complete input-referred noise model of the BJT is:

Current noise īni2 = īnB2 + īnc−ir2 + īnF2 = 2qIBQΔf  [1 + (1 + (ωrπ(Cπ+Cμ))2)/(gm rπ)] + K IBQα ln(fH/fL) Voltage noise v̄ni2 = v̄nrB2 + v̄nc−ir2 = 4kBTΔf rb + 2qIBQΔf rπ/gm

The additions above are valid only when the sources have zero mean and are uncorrelated, and when KVL/KCL permit the addition. In reality the collector and base noise are somewhat correlated, but for this course they are treated as uncorrelated.

7. Why both a voltage and a current source are needed

This is the conceptual heart of the lecture. The input-referred collector shot noise appears twice in the model — as īnc−ir and as v̄nc−ir — but they are the same noise source, so they are not independent: when the total noise at the output is calculated, the contributions of these two terms cannot simply be added as squared quantities. Their correlation matters.

The calculation uses superposition for each source with the signal source replaced by its source resistance RS (at low frequency, so Cπ and Cμ drop out). The result for the output noise current of a common-emitter stage is:

Output noise current including source resistance RS īout2 = ( gm rπ/(RB+RS+rπ) )2 × [ v̄nB2 + v̄nc−ir2 + (īnB2+īnF2)(RB+RS)2 + RS2 īnc−ir2 + 2RS √(v̄nc−ir2 īnc−ir2) ]

The last term is the cross-correlation between the voltage and current forms of the collector shot noise. Two observations follow:

The takeaway: this is exactly why two-port theory demands both an equivalent voltage and an equivalent current noise source at the input — a single source cannot give correct answers for every source impedance a user might connect. It also shows how the dominant noise source of a BJT amplifier depends on the source impedance.

8. Exercise and take-homes

Exercise 1 (from the lecture). A BJT amplifier has β = 50, gm = 38 mS and rπ = 1.33 kΩ (1 mA bias), with all capacitors noiseless and short-circuited for AC. Measurements on the amplifier give a noise figure of 3 dB with a source resistance of 50 Ω and 9 dB with 500 Ω; the effective bandwidth is 100 kHz. Find the transistor’s input-referred voltage and current noise spectral densities (v̄n2/Hz and īn2/Hz), assuming both are white.

Important take-homes from the lecture:

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